60n60 datasheet 2n3904

Datasheet

60n60 datasheet 2n3904


2n3904 7 V Symbol Test Conditions Maximum Ratings V CES T J = 25 C to 150 C 600 V 60n60 V CGR T J = 25 C to 150 C; R GE = 1 M 600 V V GES Continuous 20 V V GEM Transient 30 V I C25 T C = 25 C 100 A I C90 T C = 90 C60A I CM T C = 25 C 1 ms 200 A SSOA V GE = 15 V, T VJ = 125 C R G. 2N3903, 2N3904 General Purpose Transistors. , 12 A MDmesh™ M2 Power MOSFET in a TO- 220FP package Datasheet - production data Features Order code V R max. NXP Semiconductors Product data sheet NPN switching transistor MMBT3904 FEATURES • Collector current capability IC = 200 mA • Collector- emitter 60n60 voltage VCEO 2n3904 = 40 V. ∗ = 2n3904 2n3904 p: Made in Hong Kong. Encuentra Transistor 2sk 129 en Mercado Libre Chile.


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DESCRIPTION NPN switching transistor in a SOT23 plastic package. 2 A Continuous Drain Current ID 60n60 6. , LTD 3 of 7 www. tw QW- 2n3904 R502- 117. 2N3645 datasheet cross reference, circuit application notes in pdf format. At a company level, adopting a single repository of up- to- date 2n3904 information allows for better communication.
60n60 datasheet 2n3904. UNISONIC datasheet TECHNOLOGIES CO. 1996 IXYS All datasheet rights reserved TO- 247 AD ( IXGH) V CES I C25 V CE( sat) Low V CE( sat) 2n3904 IGBT IXGH/ IXGM 40 N60 600 V 75 A 2. 2N4969 2N3641 2N4436 EN697 MPSA10 MPSA20 2N3904 2N3903 EN3903 MPS6531 2N3638 2N4121 2N4945 TO- 106 2N4122 SE1001 2N5855: 2N3563. Abstract: 25n60 60N60. Findchips Pro offers complete visibility on the sourcing datasheet ecosystem 60n60 delivers actionable insights to supply chain, engineering business teams. 2 A Pulsed Drain Current ( Note 2) IDM 24. Type Designator: 6N60 Type of Transistor: MOSFET Type of Control Channel: N - Channel.
Abstract: 2N3645 to 106 2n5133 2N3638 2N5133 2N3644 2N3638A 2n3904 2N3703 60n60 TO98 2N5089 2N5127. Транзисторы 60n60 импортные. L ABSOLUTE MAXIMUM RATINGS ( TC = 25° C, unless 2n3904 otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain- Source datasheet Voltage VDSS 600 V Gate- Source Voltage VGSS ± 30 V Avalanche Current ( Note 2) IAR 2n3904 6. 100N03 - MOSFET N Channel Power 2n3904 Transistor SMD Advanced Power MOSFETs from APEC provide t. IXFN100N20 datasheet circuit , cross reference application notes 60n60 in pdf format. Type Designator: 60n60 IXGH60N60. VCES = 600 V Ultra- Low VCE( sat) IGBT IXGH 60N60 IC25 = 75 A IXGK 60N60 VCE( sat) = 1. dimensions section on page 3 of this data sheet. 60n60 PNP complement: MMBT3906. 20 2 NXP Semiconductors Product data sheet NPN switching transistor MMBT3904 FEATURES. 60n60 datasheet 2n3904. ORDERING INFORMATION COLLECTOR 3 2 BASE 1 EMITTER 2N 390x YWW x = 3 or 4. I DS DS( on) D STF16N60M2 600 V 0.

32 datasheet Ω 12 A • Extremely low gate charge • Excellent. страница № 1111 каталога цен радиомагазина ГУЛЛИВЕР. Транзисторы диоды т. 5 V High speed IGBT IXGH/ IXGM 40 N60A 600 V.


Datasheet

Paquete De Transistor 2n3904, 2n2222 O 2n39un. Irf3710 Mosfet N Channel Transistor Datasheet Upartronica $ 2. MMBT3904 NPN switching transistor dbook, halfpage M3D088. 20 2 NXP Semiconductors Product data sheet NPN switching transistor MMBT3904 FEATURES • Collector current capability IC = 200 mA • Collector- emitter voltage VCEO = 40 V.

60n60 datasheet 2n3904

APPLICATIONS • General switching and amplification. IXGH 60N60 IXGK 60N60 IXGT 60N60. Title: IXGH60N60_ IXGK60N60_ IXGT60N60 Author: USA IXYS Corp.